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| IGBT Improved SCSOA Capability IXSH25N120A IC25 = 50 A VCES = 1200 V VCE(sat) = 4.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms Maximum Ratings 1200 1200 20 30 50 25 80 ICM = 50 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V TO-247AD G A A A A C E SSOA VGE = 15 V, TJ = 125C, RG = 33 W (RBSOA)Clamped inductive load, L = 100 H tsc PC TJ TJM TSTG Md Weight Max. Lead Temperature for Soldering (1.6mm from case for 10s) Mounting torque TJ = 125C, VCE = 720 V; VGE = 15V, RG = 33W TC = 25C s W C C C Nm/lb-in. g C Features * Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications 1.15/10 6 300 Symbol Test Conditions Characteristic Values (T J = 25C unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25C TJ = 125C 8 200 1 + 100 4.0 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE AC motor speed control DC servo and robot drives Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies * DC choppers Advantages * Easy to mount (isolated mounting hole) * Reduces assembly time and cost * * * * VCE = 0.8 VCES , VGE= 0 V Note 2 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 95593A (7/00) (c) 2000 IXYS All rights reserved 1-2 IXSH 25N120A Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri E(on) td(off) tfi Eoff RthJC RthCK Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100H RG = 18 W, VCLAMP = 0.8 VCES Note 1 IC = Ic90, VGE = 15 V, VCE = 0.5 VCES IC = IC90, VCE = 10 V, Pulse test, t < 300 s, duty cycle < 2 % VGE = 15V, VCE = 10 V VCE = 25 V, VGE = 0 V, f = 1 MHz Characteristic Values Min. Typ. Max. 10 17 S TO-247 AD (IXSH) Outline 140 2850 210 50 120 30 50 100 200 450 650 9.6 100 200 1.8 450 900 17 0.25 A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.63 K/W K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Inductive load, TJ = 125C IC= IC90, VGE = 15 V, L = 100H RG = 18 W VCLAMP = 0.8 VCES Note 1 1.5 2.49 Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or Rg values. 2) Device must be heatsunk for high temperature measurements to avoid thermal runaway. (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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